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| 2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications Small signal low frequency amplifier VMN3 0.1 1.0 0.8 Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. 0.1 0.22 (3) 0.16 (1) (2) Structure NPN silicon epitaxial planar transistor (1) Base (2) Emitter (3) Collector 0.17 0.35 0.6 0.37 Abbreviated symbol : N Dimensions (Unit : mm) Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=1ms Single pulse 2 Each terminal mounted on a recommended land Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg 1 2 Limits 50 50 5 100 200 150 150 -55 to +150 Unit V V V mA mW C C 1/3 2SC6114 Transistors Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 50 50 5 - - - 120 - - Typ. - - - - - - - 130 1.0 Max. - - - 0.1 0.1 0.3 390 - - Unit V V V A A V - MHz pF IC=1mA IC=50A IE=50A VCB=50V VEB=5V IC/IB=25mA/2.5mA VCE=6V, IC=2mA VCE=10V, IE=-1mA, f=100MHz VCE=10V, IE=0A, f=1MHz Conditions hFE RANK Rank hFE Q 120 to 270 R 180 to 390 Electrical characterristic curves 100 COLLECTOR CURRENT : Ic (mA) VCE= -6V Ta=125C 25C -40C 1000 Ta=25C VCE= 6V 2V 1000 Ta=125C 25C -40C VCE=6V DC CURRENT GAIN : hFE 10 100 DC CURRENT GAIN : hFE 1 10 100 100 1 0.1 0.1 1 10 10 0.1 10 0.1 1 10 100 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current () Fig.3 DC current gain vs. collector current () Ic/Ib=10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) 10 COLLECTOR CURRENT : IC (mA) Ta=25C f=1MHz IE=0A 50 Ta=25C IB=200uA 40 IB=150uA 30 IB=100uA 20 IB=50uA 0.1 Ta=125C 25C -40C 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector output capacitance Fig.6 Typical output characteristics 2/3 2SC6114 Transistors 10 BASE-EMITTER SATURATION VOLTAGE : VBE(sat) (V) 1 Ta=125C 25C -40C TRANSITION FREQUENCY : FT (MHZ) Ic/Ib=10/1 1000 Ta=25C VCE=10V f=100MHz 100 0.1 0.1 1 10 100 10 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Transition frequency 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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